EEE3037: Nanoscience and Nanotechnology Assignment

Assignment

Questions

1. Design a single rectangular quantum well (QW) structure on a commercially available substrate such that the fundamental interband transition (e1–hh1) at 300 K is ???? ≈ 1.30–1.55 µm. Your exact target wavelength must be chosen using the URN last digit lookup below (state your chosen value clearly at the start):

In you answer, you must:

• Pick & justify two candidate material systems (e.g., InyGa1-yAs/InP, InxGa1-xAs/Alx In1-x As on a suitable substrate that you specify, strained InGaAs/GaAs option etc). For each candidate, you must quote parameters (eg. as a table) for bandgaps vs composition, effective masses relevant to the well, band offsets, lattice constants and mismatch, where applicable. These must be derived from journal articles (IEEE citations) and not simply just textbooks or unattributed web resources. (Independent research evaluation)
• Determine the well width and barrier compositions to satisfy the brief requirements and prove that the correct wavelength is emitted. State all assumptions and show that the formulas applied result in the correct units (show all units working, in addition to all arithmetic calculations – just adding the correct unit at the end result is unacceptable). (Technical mastery and calculation accuracy).
• Compare your two candidates on: lattice match/strain & critical thickness, offset depth & number of bound states, monolayer thickness sensitivity (±1 atomic crystal layer to the well length), interface roughness impact on linewidth, and growth feasibility (MBE/MOCVD). Using a prioritisation tool such as MoSCoW (please see EEE3035 or widely available online tutorials), make a final choice between the two candidates at (i). (Engineering Judgment).
• For your final design, consider two sections of the well, each 2 nm wide (for example 1-3 nm and 4-6 nm) or any other equal slices, as long as they are 2 nm long (will depend on your L). Comment on how the results are influenced by the effective mass and the barrier penetration, and contrast this against the infinite barrier model expectations.

2. You are given a single nanomaterial based on your URN’s last digit and you must confine your answer to a single specific application. (e.g. not general medicine, but a single, specific use or role in medicine)

Typical applications are: Transparent conductors for flexible displays; RF/high-speed transistors; electrochemical biosensors; thin-film transistors; interconnects; composite reinforcement; membranes; photodetectors; catalysts for hydrogen evolution; EMI shielding; supercapacitors; energy storage; sensors; LEDs; lasers; photodetectors; photovoltaics. Stick to a single application.

In your answer, include

• a clear statement of the application for which your nanomaterial is being used and which intrinsic property or properties (electrical, mechanical, thermal etc) of your nanomaterial is/are being specifically harnessed. Include a brief overview/description of other competitor materials and why they would under-perform your nanomaterial. The comparison must be quantitative, with facts, numbers and any relevant figures referenced in IEEE style and sourced from peer-reviewed research articles and not unverified web sources.
• a critical discussion of the added benefit to the application that they produce, including a comparison with the theoretical ‘promise’, using figures of merit. Assess if the gains are uniquely due to your chosen nanomaterial. 
• Explain the physics/engineering origin of the scientific or engineering benefit that occurs, using schematics where appropriate. Include a schematic description, where appropriate.

Summary of Assessment Requirements

This assessment focuses on demonstrating both theoretical understanding and practical application of nanoscience and quantum well design concepts through two main tasks.

Task 1: Quantum Well (QW) Design

Students were required to design a single rectangular quantum well (QW) structure that exhibits a fundamental interband transition (e1–hh1) at a wavelength between 1.30–1.55 µm at 300 K. The target wavelength was to be selected based on the student’s URN last digit.

The key requirements included:

• Selection and justification of two candidate material systems (e.g., InGaAs/InP, InGaAs/AlInAs, InGaAs/GaAs, etc.) along with compositional, structural, and electronic parameters such as:
  • Bandgaps, effective masses, band offsets, lattice constants, and mismatch.
  • Reference to IEEE-cited journal articles for parameter derivation.
• Calculation of well width and barrier composition to achieve the desired emission wavelength, with clear derivation, formulas, and unit verification.
• Comparative evaluation of both designs using criteria such as:
  • Strain/lattice matching, critical thickness, offset depth, bound states, monolayer thickness sensitivity, and growth feasibility (MBE/MOCVD).
  • Final selection using a MoSCoW prioritisation framework.
• Evaluation of effective mass and barrier penetration across two 2 nm sections of the well, comparing with infinite barrier model predictions.

Task 2: Nanomaterial Application Study

The second part required an in-depth research-based analysis of a single nanomaterial (assigned using URN digits) within a specific application context — for example, transparent conductors, biosensors, photodetectors, or energy storage.

Key components included:

• Identification of one precise application and the intrinsic property (electrical, optical, mechanical, thermal, etc.) being harnessed.
• Quantitative comparison with alternative materials using peer-reviewed IEEE-style citations.
• Critical discussion of the added functional benefits, figures of merit, and theoretical vs experimental performance.
• Explanation of the underlying physical/engineering principles behind the nanomaterial’s advantage, supplemented with schematics and illustrations where necessary.

Mentor-Guided Approach and Step-by-Step Process

The academic mentor structured the guidance into systematic phases to ensure conceptual clarity, research precision, and analytical coherence.

Step 1: Understanding the Task and Defining the Target

The mentor began by breaking down the two assessment sections:

• Clarifying target wavelength ranges and linking them to bandgap engineering principles.
• Helping the student identify reliable IEEE journals for parameter extraction.
• Emphasizing the importance of proper referencing and academic integrity.

Step 2: Material System Selection and Justification

The mentor guided the student to:

• Shortlist two potential material systems (e.g., InGaAs/InP and InGaAs/AlInAs) and retrieve relevant bandgap-composition data.
• Prepare a comparative parameter table including lattice mismatch, band offsets, and effective masses.
• Discuss each material’s growth feasibility and strain limitations, introducing critical thickness theory.

Step 3: Quantum Well Design Calculations

The mentor supervised the computation stage, ensuring:

• The student used quantum confinement and transition energy equations accurately.
• Proper unit conversion and dimensional analysis was demonstrated at each step.
• Graphical validation of wavelength results was performed to ensure design accuracy.

Step 4: Candidate Comparison and Final Selection

Using the MoSCoW method, the mentor helped the student prioritize:

• Must-have parameters (lattice matching, target wavelength).
• Should-have aspects (feasible fabrication route).
• Could-have advantages (tunable emission, scalability).
• The final selection was justified through quantitative reasoning, emphasizing engineering judgment.

Step 5: Effective Mass and Barrier Penetration Analysis

The mentor guided the student to:

• Divide the well into 2 nm regions and analyse carrier probability distributions.
• Contrast finite vs infinite barrier models and discuss quantum tunneling effects.
• Interpret physical results in terms of realistic fabrication constraints.

Step 6: Nanomaterial Application Research

In Task 2, the mentor directed the student to:

• Select one specific application area (e.g., graphene-based photodetectors or MoS₂ transistors).
• Identify the key performance metrics (mobility, conductivity, sensitivity, etc.) and compare them quantitatively with traditional materials.
• Develop IEEE-cited literature support and integrate schematic illustrations of working principles.

Step 7: Critical Discussion and Final Draft

The mentor assisted in refining the final submission by:

• Ensuring a logical flow between theory, design, and analysis.
• Reviewing citation formatting and clarity of schematics.
• Encouraging the student to conclude with how the design and analysis reflect professional engineering judgment and analytical competency.

Final Outcome and Learning Objectives Achieved

Through this guided approach, the student successfully:

• Designed a theoretically sound and fabrication-feasible quantum well structure.
• Demonstrated ability to research and evaluate semiconductor material systems using peer-reviewed sources.
• Applied quantum mechanical principles to achieve target emission wavelengths.
• Showcased critical comparison and justification through the MoSCoW prioritization model.
• Conducted quantitative performance evaluation of nanomaterials in a specific, real-world application.
• Linked theoretical knowledge with practical engineering and research-based decision-making.

Learning Outcomes Covered

• CLO1: Application of advanced materials and semiconductor design principles.
• CLO2: Integration of theoretical knowledge with analytical and computational reasoning.
• CLO3: Development of critical research, evaluation, and presentation skills.
• CLO4: Demonstration of engineering judgment through problem-solving and design justification.

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